Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3: Difference between revisions
Created page with "'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Scandium_Nitride/ScN_Reactive_RF_Sputtering_in_Cluster_Lesker_PC3&action=submit click here]''' <i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br> All images and photos on this page belongs to <b>DTU Nanolab</b>.<br>..." |
|||
| Line 506: | Line 506: | ||
Interpreting the stoichiometry of the ScN film is challenging due to the overlap between the N1s peak and the Sc2p peak. Additionally, while scandium has various interesting electronic states that can be measured and utilized in calculations (such as Sc3s), there is only one electronic state for nitrogen, N1s, which requires careful deconvolution from the Sc2p peak. | Interpreting the stoichiometry of the ScN film is challenging due to the overlap between the N1s peak and the Sc2p peak. Additionally, while scandium has various interesting electronic states that can be measured and utilized in calculations (such as Sc3s), there is only one electronic state for nitrogen, N1s, which requires careful deconvolution from the Sc2p peak. | ||
The ScN sample used for XPS analysis was deposited at the PC Gun Z-shift Extended position (95.20mm) under the following conditions: | The ScN sample used for XPS analysis was deposited at the PC Gun Z-shift Extended position (95.20mm) under the following conditions: 400°C, Ar/N 40/18 sccm, 200W power, 3mTorr pressure, and a deposition time of 1000 seconds. | ||
<gallery caption="X-ray reflectivity scans of Sc thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3"> | <gallery caption="X-ray reflectivity scans of Sc thin films (PC3 Src1). " widths="450px" heights="400px" perrow="3"> | ||