Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
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| Line 21: | Line 21: | ||
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|- | |- | ||
| | |1nit_std | ||
|40 | |40 | ||
|20 | |20 | ||
| Line 27: | Line 27: | ||
|550 | |550 | ||
|60 | |60 | ||
| | |Process control recipe | ||
|- | |- | ||
|} | |} | ||
| Line 39: | Line 39: | ||
|Uniformity [%] | |Uniformity [%] | ||
|Stress [MPa] | |Stress [MPa] | ||
|Comments | |||
|- | |- | ||
|1nitride | |1nitride | ||
| | |||
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| Line 46: | Line 48: | ||
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|- | |- | ||
| | |1nit_std | ||
|~32 | |~32 | ||
|1.89 | |1.89 | ||
|~1 | |~1 | ||
| | | | ||
|The latest measured values can be seen in the process control sheet in LabManager | |||
|- | |- | ||
|} | |} | ||