Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

The deposition rate is normally a little below 10 nm/min. But especially for short depositions, the deposition rate is higher and depends on the deposition time. The mean reason for this is that there is some TEOS (about 20-30 nm) will be deposited during the pre- and post-deposition steps, and this does not count as deposition time. The pre-deposition step is when the TEOS is introduced into the furnace tube before the deposition, and the pre-deposition step is when the TEOS gas line and mass flow controller are emptied through the furnace tube after the deposition.