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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

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==Process parameters for the two standard deposition recipes on the TEOS furnace:==
==Process parameters for the two standard deposition recipes on the TEOS furnace:==
{| border="1" cellspacing="0" cellpadding="0"  
{| border="1" cellspacing="0" cellpadding="4"  
!Recipe name
!Recipe name
!Wafer size and number of wafers
!Wafer size and number of wafers
Line 37: Line 37:
!Comments
!Comments
|-  
|-  
|"Standby" or "Stb-slw"
| "STANDBY" and "STB-SLOW"  
|4" wafers
(standby recipe)
| 4" wafers
1-17 wafers in a run
1-17 wafers in a run
|725
| 560
|atmosphere
(wafer loading temperature)
|0
| Atmosphere
|0
| 0
|0
| 0
|0
| 0
|For load and unload the wafers
| 0
| For load and unload the wafers
|-
|-
|"TEOS"
| "TEOS"  
|4" wafers
(deposition recipe)
| 4" wafers
1-17 wafers in a run
1-17 wafers in a run
|725
| 715, 712, 720
|190
(temperature zone 1, 2, 3)
|50
| 175
|30
| 50
|0
| 0
|0
| 0
|Process recipe
| 0
| Process recipe
|}
|}


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