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'''Feedback to this page''': '''[mailto:danchipsupport@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system click here]'''
°'''Feedback to this page''': '''[mailto:danchipsupport@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system click here]'''


[[Category: Equipment|Thin film Sputter deposition Lesker]]
[[Category: Equipment|Thin film Sputter deposition Lesker]]
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[[image:Kaempe_Lesker_image_front_page1.jpg|450x450px|right|thumb|Cluster-based multi-chamber high vacuum sputtering deposition system. View from service room Ax-1.]]
[[image:Kaempe_Lesker_image_front_page1.jpg|450x450px|right|thumb|Cluster-based multi-chamber high vacuum sputtering deposition system. View from service room Ax-1.]]


Cluster-based multi-chamber high vacuum sputtering deposition system is a robotic cluster tool with two deposition chambers sharing the same distribution trasfer station and the load-lock. The equipment has been installed and accepted in clean-room during January 2020. The purpose of the tool is to deposite variety of materials using DC/RF/PulseDC/HIPIMS magnetron sputtering with or without RF substrate bias. In modul A or <b>PC 1</b> (process chamber 1) it is possible to deposit any materials using 6 x 3” magnetrons sourses with N<sub>2</sub> or O<sub>2</sub> reactive gases. Modul B or <b>PC 3</b>  (process chamber 3) is dedicated to oxygen free materials - nitrides and metals. It is eqipted with 1 x 4” + 2 x 3” magnetrons and supplied with N<sub>2</sub> process gas for reactive deposition. Both chambers allow heating of substrates up to 600 <sup>o</sup>C. The equipment is located in clean-room A-5 where the user can acces the cassete loader.  
The cluster-based multi-chamber high vacuum sputtering deposition system is a robotic cluster tool with two deposition chambers sharing the same distribution trasfer station and the load-lock. The equipment has been installed and accepted in the clean-room during January of 2020. The purpose of the tool is to deposit a variety of materials using DC/RF/PulseDC/HIPIMS magnetron sputtering with or without RF substrate bias.  
 
In module A or <b>PC 1</b> (process chamber 1) it is possible to deposit any material using 6 x 3” magnetrons sourses with N<sub>2</sub> or O<sub>2</sub> reactive gases.  
 
Module B or <b>PC 3</b>  (process chamber 3) is dedicated to oxygen free materials - nitrides and metals. It is equipped with 1 x 4” + 2 x 3” magnetrons and supplied with N<sub>2</sub> process gas for reactive deposition. Both chambers allow heating of substrates up to 600 <sup>o</sup>C. The equipment is located in cleanroom A-5 where the user can acces the cassette loader.  




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Thin Film group <i><u>thinfilm@nanolab.dtu.dk</u></i> is responsible for the equipment.
The Thin Film group <i><u>thinfilm@nanolab.dtu.dk</u></i> is responsible for the equipment.


Target/Metal requests should be sent to <i><u>metal@nanolab.dtu.dk</u></i>.
Target/Metal requests should be sent to <i><u>metal@nanolab.dtu.dk</u></i>.
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= Sputtering deposition system set-up=
= Sputtering deposition system set-up=


The cluster sputter system is used for deposition of metals, magnetic metals and dielectrics on a single wafer 4" or 6" wafer or several small samples. Samples will be placed on the ten shelves cassette and loaded in the load lock module. After the load lock chamber is pumped down, the sample can be transferred to the desired process chamber. The sample will be rotated over the target and can be heated up to 600C while depositing the film. The system is equipped with two process chambers connected to a wafer transfer robot, and a load lock chamber.
The cluster sputter system is used for deposition of metals, magnetic metals and dielectrics on a single 4" or 6" wafer or several small samples. Samples will be placed on the ten-shelf cassette and loaded in the load lock module. After the load lock chamber is pumped down, the sample can be transferred to the desired process chamber. The sample will be rotated over the target and can be heated up to 600 °C while depositing the film. The system is equipped with two process chambers connected to a wafer transfer robot and a load lock chamber.


<gallery caption="System set-up and power supply configuration." widths="1000px" heights="600px" perrow="1">
<gallery caption="System set-up and power supply configuration." widths="1000px" heights="600px" perrow="1">
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==Power supply configuration==  
==Power supply configuration==  


Power supplies specifications presented in a table below.
Power supply specifications are presented in a table below.


{| border="2" cellspacing="0" cellpadding="9"  
{| border="2" cellspacing="0" cellpadding="9"  
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== Sputter-System Metal-Oxide (PC1) ==
== Sputter-System Metal-Oxide (PC1) ==


Chamber PC1 consists of six KJLC Torus® 3" magnetron sputtering sources with possibility of RF, DC, Pulse DC and HIPIMS sputtering. There are Argon, Nitrogen and Oxygen gas lines connected to this chamber. The chamber has a possibility to do the RF bias on a substrate, which can be used as substrate cleaning before the deposition or used during the deposition to alter the film properties. A deposition of magnetic material, which requires high strength magnet (HSM), has to be installed on source 3 in PC1. It is possible to do the co-sputtering (sputtering of two or more sources at the same time) as long as the sources are not sharing the same power supply.  
Chamber PC1 consists of six KJLC Torus® 3" magnetron sputtering sources with possibility of RF, DC, Pulse DC and HIPIMS sputtering. There are Argon, Nitrogen and Oxygen gas lines connected to this chamber. The chamber allows RF bias on the substrate, which can be used for substrate cleaning before the deposition or used during the deposition to alter the film properties. Deposition of magnetic materials requires the high strength magnet (HSM), which must be installed on source 3 in PC1. It is possible to do co-sputtering (sputtering of two or more sources at the same time) as long as the sources are not sharing the same power supply.  




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