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| ==Process parameters for the two standard deposition recipes on the new nitride furnace:==
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| {| border="2" cellspacing="1" cellpadding="5"
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| !Recipe name
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| !Wafer size and number of wafers
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| !Temperature [<sup>o</sup>C]
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| !Pressure [mTorr]
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| !NH3 gas flow [sccm]
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| !DCS gas flow [sccm]
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| !Comments
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| |-
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| |"4NITDAN"
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| |4" wafers
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| 1-25 wafers in a run
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| |780 - 790
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| |200
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| |100
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| |33
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| |Stoichiometric nitride
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| |-
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| |"6NITDAN"
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| |6" wafers
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| 1-25 wafers in a run
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| |780 - 790
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| |200
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| |120
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| |30
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| |Stoichiometric nitride
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| |}
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| ==Expected results when using the two standard recipes on the new nitride furnace:==
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| These are typical values
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| {| border="2" cellspacing="1" cellpadding="6"
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| !Recipe name
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| !Deposition rate [Å/min]
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| !Refractive index@630nm
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| !Thickness variation on wafer
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| !Thickness variation along the boat
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| !Stress [MPa]
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| |-
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| |"4NITDAN"
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| |~ 30-35
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| |2.00 - 2.01
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| |<3%
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| |<3%
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| |-
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| |"6NITDAN"
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| |~ 30-35
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| |2.00 - 2.01
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| |<3%
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| |-
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| |}
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| ==Using LPCVD silicon nitride as a masking material for KOH etching== | | ==Using LPCVD silicon nitride as a masking material for KOH etching== |
