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LabAdviser/Technology Research/Nanofabrication of Inductive Components for Integrated Power Supply On Chip: Difference between revisions

Hoalet (talk | contribs)
Hoalet (talk | contribs)
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configuration at both terminals for wafer-level probing. Four 800 µm by 800 µm pads at the corners are for flip-chip bonding. (b) 1:1 toroidal transformer. The primary coil has larger conductors than that of the secondary coil. (c) solenoid inductor, (d) spiral inductor, (e) "DTU" inductor.
configuration at both terminals for wafer-level probing. Four 800 µm by 800 µm pads at the corners are for flip-chip bonding. (b) 1:1 toroidal transformer. The primary coil has larger conductors than that of the secondary coil. (c) solenoid inductor, (d) spiral inductor, (e) "DTU" inductor.


=Technology Development=
=Process Development=


[[/Air-core Inductor|Air-core Inductor]]
[[/Air-core Inductor|Air-core Inductor]]