LabAdviser/Technology Research/Technology Development of 3D Silicon Plasma Etching process for Novel Devices and Applications: Difference between revisions
| Line 99: | Line 99: | ||
==Relevant technology details== | ==Relevant technology details== | ||
Several fabrication technologies have been developed and optimized, which are listed as below. | |||
Plasma etching process have been performed mostly on the DRIE-Pegasus system. High aspect ratio structures, 3D structures and black silicon have been fabricated, technology details are accessible in the following pages: | |||
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch high aspect ratio silicon microstructures|Etch high aspect ratio silicon microstructures]] | * [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch high aspect ratio silicon microstructures|Etch high aspect ratio silicon microstructures]] | ||
| Line 104: | Line 108: | ||
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch black silicon|Etch black silicon]] | * [[Specific Process Knowledge/Etch/DRIE-Pegasus/Etch black silicon|Etch black silicon]] | ||
* [[Specific Process Knowledge/Etch/DRIE-Pegasus/Using OES to monitor etch process|Using OES to monitor etch process]] | * [[Specific Process Knowledge/Etch/DRIE-Pegasus/Using OES to monitor etch process|Using OES to monitor etch process]] | ||
For high resolution nanostructure patterning, electron beam writer JEOL_JBX-9500FSZ has been used with HSQ as a high resolution e-beam resist, technology details are accessible in the following page: | |||
* [[Specific_Process_Knowledge/Lithography/EBeamLithography/High resolution patterning with HSQ|High resolution patterning with HSQ]] | * [[Specific_Process_Knowledge/Lithography/EBeamLithography/High resolution patterning with HSQ|High resolution patterning with HSQ]] | ||