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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,324 edits
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{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!QC limits
!PECVD3
!PECVD4
|-
|-
|Depoition rate
|Depoition rate
|~40 nm/min
|~ 11.6 nm/min
|-
|-
|Non-uniformity
|Non-uniformity
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|-
|-
|Refractive Index
|Refractive Index
|2.02 - 2.04
|1.996 - 2.018
|}
|}
|-
|-
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