Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
No edit summary |
|||
| Line 4: | Line 4: | ||
At the moment DANCHIP has 2 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD4 is for clean silicon based and III-V based samples. PECVD3 is for silicon based samples but here up 5% (4 cm2) wafer coverage of other materials as metals are allowed. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD3 and PECVD4 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system. | At the moment DANCHIP has 2 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD4 is for clean silicon based and III-V based samples. PECVD3 is for silicon based samples but here up 5% (4 cm2) wafer coverage of other materials as metals are allowed. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD3 and PECVD4 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system. | ||
== Deposition of SiN with PECVD4 | == Deposition of SiN with PECVD4 == | ||
{| border="1" cellspacing="2" cellpadding="2" | {| border="1" cellspacing="2" cellpadding="2" | ||