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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
At the moment DANCHIP has 2 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD4 is for clean silicon based and III-V based samples. PECVD3 is for silicon based samples but here up 5% (4 cm2) wafer coverage of other materials as metals are allowed. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD3 and PECVD4 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.


== Deposition of SiN with PECVD4 [[Image:section under construction.jpg|70px]] ==
== Deposition of SiN with PECVD4 [[Image:section under construction.jpg|70px]] ==
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