Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
| Line 45: | Line 45: | ||
|- | |- | ||
|LF SIN<!-- Recipe --> | |LF SIN<!-- Recipe --> | ||
|<!-- Dep. rate [nm/min] --> | |40-43 nm/min<!-- Dep. rate [nm/min] --> | ||
|<!-- RI --> | |1.983-1.984<!-- RI --> | ||
|<!-- Unif. [%] --> | |± 3.9-4.4%<!-- Unif. [%] --> | ||
|<!-- Stress [MPa] --> | |Compressive: 565.4 MPa<!-- Stress [MPa] --> | ||
|<!-- Comments --> | |<!-- Comments --> | ||
|<!-- SiH4 [sccm] --> | |40<!-- SiH4 [sccm] --> | ||
|<!-- NH3 [sccm] --> | |20<!-- NH3 [sccm] --> | ||
|<!-- N2O [sccm] --> | |<!-- N2O [sccm] --> | ||
|<!-- N2 [sccm] --> | |1960<!-- N2 [sccm] --> | ||
|<!-- Pressure [mTorr] --> | |550 mTorr<!-- Pressure [mTorr] --> | ||
|<!-- Power [W] --> | |60LF<!-- Power [W] --> | ||
|<!-- Load --> | |<!-- Load --> | ||
|<!-- Tune --> | |<!-- Tune --> | ||
|<!-- Time [mm:ss] --> | |2:00/23:00(stress)<!-- Time [mm:ss] --> | ||
|February 2017 bghe<!--Tested --> | |February 2017 bghe<!--Tested --> | ||
|- | |- | ||