Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
| Line 113: | Line 113: | ||
|- | |- | ||
|Pressure | |Pressure | ||
| | |845 mTorr | ||
|- | |- | ||
|RF-power | |RF-power | ||
| | | | ||
*LF: | *LF: 100 W 7.8s | ||
*HF: | *HF: 100 W 2.2s | ||
|- | |- | ||
|} | |} | ||