Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si: Difference between revisions

Revision as of 10:40, 25 November 2015 view source Kabi (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 1,142 edits →Process parameters ← Older edit		Revision as of 10:41, 25 November 2015 view source Kabi (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 1,142 edits →Process parameters Newer edit →
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	'''Test wafer position:''' Center of the boat		'''Test wafer position:''' Center of the boat

	A better uniformity was achieved by annealing in N<sub>2</sub>. Measured film thickness was ~~approximately~~ 370 nm and the sheet resistance was measured to 200 Ω/sq +/- 15 Ω/sq.		A better uniformity was achieved by annealing in N<sub>2</sub>. Measured film thickness was 370 nm and the sheet resistance was measured to 200 Ω/sq +/- 15 Ω/sq.