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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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|Depoition rate
|Depoition rate
|? - ? nm/min
|10.4 - 13.0 nm/min
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|Non-uniformity
|Non-uniformity
|? - ? %
|<2.0 %
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|Refractive Index
|1.909 - 2.028
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