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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
== Deposition of SiN with PECVD4 [[Image:section under construction.jpg|70px]] ==
{| border="1" cellspacing="2" cellpadding="2"
|-style="background:Black; color:White"
! Parameter
|Recipe name: '''SiO2_res''' ('''SiO2''' etch with '''res'''ist mask) 
|-
|Coil Power [W]
|1300
|-
|Platen Power [W]
|200
|-
|Platen temperature [<sup>o</sup>C]
|0
|-
|He flow [sccm]
|174
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|5
|-
|H<sub>2</sub> flow [sccm]
|4
|-
|Pressure [mTorr]
|4
|-
|}
{| border="2" cellspacing="2" cellpadding="3"
|-style="background:DarkGray; color:White"
!Material to be etched
!Etch rate using SiO2_res
|-
|Thermal oxide
|
*'''~230nm/min (5% etch load)''' -  etch load dependency [[/AOE SiO2 etch load dependency|'''see here''']]
*~200 nm/min ''fall 2016 by Martin Lind Ommen @nanotech''
|-
|TEOS oxide (5% load)
|'''233nm/min &plusmn;0.7%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 ''by LN/BGE@danchip''
|-
|PECVD1 (standard) oxide (5% load)
|'''242nm/min &plusmn;0.6%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by ''LN/BGE@danchip''
|-
|Al2O3 from the ALD
|
*34.2 nm/min (1:6 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
*50nm can be etched in 10min - [[/Etch of Al2O3|'''See results here''']] etched in November 2014 by ''FRSTO@danchip''
|-
|Silicon rich nitride from furnace B2
|136nm was etched in 1min (whole wafer) - etched in October 2015 by ''bghe@danchip''
|-
|Cr
|6 nm/min (1:33 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
|-
|Al
|25nm/min (1:8 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
|-
|}
<br clear="all" />


==Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride ==
==Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride ==

Revision as of 07:59, 22 March 2017

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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.

Deposition of SiN with PECVD4

Parameter Recipe name: SiO2_res (SiO2 etch with resist mask)
Coil Power [W] 1300
Platen Power [W] 200
Platen temperature [oC] 0
He flow [sccm] 174
C4F8 flow [sccm] 5
H2 flow [sccm] 4
Pressure [mTorr] 4



Material to be etched Etch rate using SiO2_res
Thermal oxide
  • ~230nm/min (5% etch load) - etch load dependency see here
  • ~200 nm/min fall 2016 by Martin Lind Ommen @nanotech
TEOS oxide (5% load) 233nm/min ±0.7% - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by LN/BGE@danchip
PECVD1 (standard) oxide (5% load) 242nm/min ±0.6% - "±" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by LN/BGE@danchip
Al2O3 from the ALD
  • 34.2 nm/min (1:6 to SiO2) fall 2016 by Martin Lind Ommen @nanotech
  • 50nm can be etched in 10min - See results here etched in November 2014 by FRSTO@danchip
Silicon rich nitride from furnace B2 136nm was etched in 1min (whole wafer) - etched in October 2015 by bghe@danchip
Cr 6 nm/min (1:33 to SiO2) fall 2016 by Martin Lind Ommen @nanotech
Al 25nm/min (1:8 to SiO2) fall 2016 by Martin Lind Ommen @nanotech



Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride

Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
SINSTD80 30 20 1000 500 80
SINSTD96 30 20 1000 500 96
1SiN 40 20 1000 700 150

Expected results

Recipe name Deposition rate [nm/min] RI Uniformity [%] Stress [MPa] BHF etch rate [Å/min] Comments
1SiN

Deposition rate in the middle of two wafers: 49nm/min+-1nm/min (2015-04-24 BGHE)
In the middel: 72.6-76.4 nm/min (2014-08-13 BGHE) Old shower head
Variation over 3 wafers: 71.4-78.6 nm/min (2014-08-13 BGHE) Old shower head

~2-4% (2015-04-24 BGHE)
~5% in the middel (4") (2014-08-13 BGHE) Old shower head
~10% over 3 wafers (2014-08-13 BGHE) Old shower head

SINSTD80 68nm/min (2014-07-07 JML)- unstable deposition rate
SINSTD96 - unstable deposition rate


Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride

Quality Controle (QC) for PECVD3
QC Recipe: QCNITRIDE
SiH4 flow 30 sccm
NH3 flow 30 sccm
N2 flow 1470 sccm
Pressure 845 mTorr
RF-power
  • HF: 100 W 7.8s
  • LF: 100 W 2.2s
QC limits PECVD3
Depoition rate ~40 nm/min
Non-uniformity <3.0 %
Refractive Index 2.02 - 2.04


Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
MFSiNLS2 30 30 1470 845 100HF 7.8s

100LF 2.2s

Low stress nitride - standard recipe. The latest measured values can be seen in the process control sheet in LabManager.
MFSiNLS 30 30 1470 650 20HF 6s

30LF 2s

Low stress nitride - old standard recipe. This one is not running well any more.
LFSiN 30 15 1470 550 60LF Compressive stress
HFSiN 30 42 1470 900 20HF Tensile stress

LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress

Expected results

Recipe name Deposition rate [Å/min] RI Uniformity [%]
[Std./mean] 		Stress [MPa] KOH etch rate [Å/min] BHF etch rate [Å/min] See more
MFSiNLS2 ~422 (bghe Feb 2016) ~2.03 ~2 ~6 (bghe Feb 2016) ~2.1 (bghe Feb 2016) ~? see DOE
MFSiNLS ~107 ~1.99 ~4 ~-30 ~2.5 ~250 .
LFSiN ~550 ~1.96 ~3 ~-630 . . .
HFSiN ~130 ~1.97 ~2 ~460 . . .

Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride. Expired!:PECVD1 has been decommissioned

Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
1nitride 30 20 1000 500 80
1nit_std 40 20 1960 550 60 Process control recipe

Expected results

Recipe name Deposition rate [nm/min] RI Uniformity [%] Stress [MPa] BHF etch rate [Å/min] Comments
1nitride
1nit_std ~32 1.89 ~1 ~700 The latest measured values can be seen in the process control sheet in LabManager
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