Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/SiO2 disk and granule source tests in Temescal October 2026: Difference between revisions
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=== Treatment of heating-timer interruptions === | === Treatment of heating-timer interruptions === | ||
Run 1 was interrupted by alarms when the 30-minute heating allowance expired ( | Run 1 was interrupted by alarms when the 30-minute heating allowance expired (corrected to 300 min for Run2). The main plots use sustained DEPOSIT phases, exclude repeated rise/soak sequences, and omit a fixed 120 s recovery interval after each restart. These exclusions are shown as gaps. Three isolated zero-power DEPOSIT-labelled records preceding restart ramps are also excluded. The initial startup is retained. | ||
No smoothing, outlier removal or thickness rescaling is applied to the remaining points. Original record order and small reversals in the thickness indication are preserved. The package includes the unfiltered wall-clock plots and all records. Cumulative deposition-phase time is about 101.33 min for Run 1 and 99.87 min for Run 2; the separate shutter-open counters are each 3 s shorter. | No smoothing, outlier removal or thickness rescaling is applied to the remaining points. Original record order and small reversals in the thickness indication are preserved. The package includes the unfiltered wall-clock plots and all records. Cumulative deposition-phase time is about 101.33 min for Run 1 and 99.87 min for Run 2; the separate shutter-open counters are each 3 s shorter. | ||