Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/SiO2 disk and granule source tests in Temescal October 2026: Difference between revisions

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 === Implications for calibration ===
-The final logged values confirm that both depositions reached the intended 600 nm range. The approximately 11% difference from ellipsometry therefore remains a calibration question rather than an unrecorded extra 50 nm of indicated deposition. Relative to the post-ramp summaries, the differences are approximately +10.70% and +11.24%.
+The final logged values confirm that both depositions reached the intended 600 nm range. The approximately 11% difference from ellipsometry therefore remains a calibration question (Tooling factor).
-The similar offsets motivate checking QCM calibration and sample position within the HULA holder before selecting a new tooling factor. QCM thickness conversion depends on density and tooling geometry [2]. The entered 2.648 g/cm<sup>3</sup> is a controller setting; the recorded thickness alone does not identify which calibration input needs adjustment.
+The present tooling factor may be adjusted and confirmed to the different 200-mm wafer holder that differs from HULA in geometry design and wafer placement. The HULA may require a slightly higher tooling factor.
-'''Note.''' At 1 Å/s, 600 nm corresponds to 100 min. The logged shutter-open totals are consistent with this scale. Run 1’s heating-timer pauses increase elapsed time but are not included in the main comparison of deposition behaviour.
 == Recorded power versus thickness ==