Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/SiO2 disk and granule source tests in Temescal October 2026: Difference between revisions

← Older editNewer edit →
VisualWikitext
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,692 edits
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,692 edits
Line 55: Line 55:
|}
|}


=== Common tooling-file settings ===
=== Common tooling-file and deposition settings ===


{| class="wikitable" style="width:100%;"
{| class="wikitable" style="width:100%;"
Line 66: Line 66:
| Control TC / control DT || 0.1 s / 0.1 s
| Control TC / control DT || 0.1 s / 0.1 s
|-
|-
| Maximum power / O<sub>2</sub> flow setting || 10% / 5%
| Maximum allowed power || 10%
|-
|-
| Rate / thickness setpoint || 1 Å/s (0.1 nm/s) / 600 nm
| O<sub>2</sub> flow setting || 5%
|-
| Rate || 1 Å/s  
|-
| Thickness setpoint || 600 nm
|}
|}


Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/SiO2_disk_and_granule_source_tests_in_Temescal_October_2026"