Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3: Difference between revisions
| Line 179: | Line 179: | ||
! XRR density | ! XRR density | ||
! XRR roughness | ! XRR roughness | ||
|- | |- | ||
| No substrate bias | | No substrate bias | ||
| Line 188: | Line 187: | ||
| 4.741 g/cm<sup>3</sup> | | 4.741 g/cm<sup>3</sup> | ||
| 7.873 nm | | 7.873 nm | ||
|- | |- | ||
| 30 W RF substrate bias (69 V DC bias) | | 30 W RF substrate bias (69 V DC bias) | ||
| Line 197: | Line 195: | ||
| Not obtained | | Not obtained | ||
| Not obtained | | Not obtained | ||
|} | |} | ||