Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
| Line 39: | Line 39: | ||
|Uniformity [%] | |Uniformity [%] | ||
|Stress [MPa] | |Stress [MPa] | ||
|BHF etch rate [Å/min] | |||
|Comments | |Comments | ||
|- | |- | ||
|1nitride | |1nitride | ||
| | |||
| | | | ||
| | | | ||
| Line 53: | Line 55: | ||
|~1 | |~1 | ||
| | | | ||
|~700 | |||
|The latest measured values can be seen in the process control sheet in LabManager | |The latest measured values can be seen in the process control sheet in LabManager | ||
|- | |- | ||