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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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New page: At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be ...
 
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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
==Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride==
==Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride==
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|NH3 flow [sccm]
|N2 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|MFSiNLS
|30
|30
|1470
|650
|20HF 6s/20LF 2s
|Low stress nitride - standard recipe
|-
|LFSiN
|30
|15
|1470
|550
|60LF
|Compressive stress
|-
|HFSiN
|30
|42
|1470
|900
|20HF
|Tensile stress
|-
|}
LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [Å/min]
|RI
|Uniformity [%]
|Stress [MPa]
|-
|MFSiNLS
|~117
|~1.99
|
|~-30
|-
|LFSiN
|~550
|~1.96
|~3
|~-630
|-
|HFSiN
|~130
|~1.97
|~2
|~460
|-
|}