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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using Lesker sputter tool: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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The "SiO<sub>2</sub> target (RF sputter)" study was done on clean Si substrates. The sputter power was 157W and the pressure 3.5 mTorr using RF sputtering of a SiO<sub>2</sub> target. The film thicknesses were around 42 nm.
The "SiO<sub>2</sub> target (RF sputter)" study was done on clean Si substrates. The sputter power was 157W and the pressure 3.5 mTorr using RF sputtering of a SiO<sub>2</sub> target. The film thicknesses were around 42 nm.


===From SiO<sub>2</sub> target (RF sputter)===
====From SiO<sub>2</sub> target (RF sputter)====
{| {{table}} border="1" cellspacing="0" cellpadding="8"
{| {{table}} border="1" cellspacing="0" cellpadding="8"
| align="center" style="background:#f0f0f0;"|'''Wafer nr'''
| align="center" style="background:#f0f0f0;"|'''Wafer nr'''
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