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Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions

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There are in total 76 developed and tested process recipes for general users (48 for PC1 and 28 for PC3). Starting the recipe the user can change te relevant process parameters: power, pressure, reactive gas ratio, rotation speed, substrate bias etc. In addition to the process recipes, there are also recipes for substrate heating and RF cleaning.
There are 76 developed and tested process recipes for general users (48 for PC1 and 28 for PC3). They include convenient and reative DC, RF and PulseDC sputtering with or without substrate bias. Deposition using HiPIMS can only be done with DTU Nanolab staff assistance. Starting the recipe the user can change the relevant process parameters: power, pressure, reactive gas ratio, rotation speed, substrate bias etc. In addition to the process recipes, there are also recipes for substrate heating and RF cleaning.




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<gallery caption="Deposition rates of HfO2 at different temperaturs. ALD window." widths="800px" heights="200px" perrow="1">
<gallery caption="The build-up of the standard recipe name" widths="800px" heights="200px" perrow="1">
image:Kaempe_Lesker_standard_recipe_name.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
image:Kaempe_Lesker_standard_recipe_name.png| The standard recipe has its own unic name starting with letters "MD" which stands for "Master Deposition".
</gallery>
</gallery>


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