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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions

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==Expected results when using the two standard recipes on the old nitride furnace:==
==Deposition rate:==
These are typical values
The deposition rate is normally a little over 10nm/min (10.5nm/min) and the refractive index is around 4.44 for both recipes.
{| border="2" cellspacing="1" cellpadding="6"
 
!Recipe name
!Deposition rate [Å/min]
!Refractive index@630nm
!Thickness variation on wafer
!Thickness variation along the boat
!Stress [MPa]
|-
|"NITRIDE"
|46-52
|2.01-2.02
|<1.3%
|<4%
|1000
|-
|"SIRICH"
|30-40
|2.20-2.30
|<5%
|<20%
|(-50 to 50)
|-
|}


==Process parameters for the two standard deposition recipes on the new nitride furnace:==
==Process parameters for the two standard deposition recipes on the new nitride furnace:==
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