Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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 == Deposition of SiN with PECVD4 ==
+{| border="1" cellspacing="2" cellpadding="2" colspan="3"
+|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD4'''
+|-
+|
+*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3]<br>
+*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3]<br>
+{| {{table}}
+| align="center" |
+{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"
+! QC Recipe:
+! QCNITRIDE
+|-
+| SiH<sub>4</sub> flow
+|30 sccm
+|-
+|NH<sub>3</sub> flow
+|30 sccm
+|-
+|N<sub>2</sub> flow
+|1470 sccm
+|-
+|Pressure
+|845 mTorr
+|-
+|RF-power
+|
+*HF: 100 W 7.8s
+*LF: 100 W 2.2s
+|-
+|}
+| align="center" valign="top"|
+{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
+!QC limits
+!PECVD3
+|-
+|Depoition rate
+|~40 nm/min
+|-
+|Non-uniformity
+|<3.0 %
+|-
+|Refractive Index
+|2.02 - 2.04
+|}
+|-
+|}
+|}
 {| border="1" cellspacing="2" cellpadding="2"