Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
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| Line 32: | Line 32: | ||
|± 1.7%<!-- Unif. [%] --> | |± 1.7%<!-- Unif. [%] --> | ||
|157 MPa <!-- Stress [MPa] --> | |157 MPa <!-- Stress [MPa] --> | ||
|[[MF_SiN results|more results]]<!-- Comments --> | |[[/MF_SiN results|more results]]<!-- Comments --> | ||
|40<!-- SiH4 [sccm] --> | |40<!-- SiH4 [sccm] --> | ||
|40<!-- NH3 [sccm] --> | |40<!-- NH3 [sccm] --> | ||