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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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|MF SIN<!-- Recipe -->
|MF SIN<!-- Recipe -->
|<!-- Dep. rate [nm/min] -->
|12.9-13.0 nm/min<!-- Dep. rate [nm/min] -->
|<!-- RI -->
|2.038-2.044<!-- RI -->
|<!-- Unif. [%] -->
|&plusmn; 1.7%<!-- Unif. [%] -->
|<!-- Stress [MPa] -->
|157 MPa <!-- Stress [MPa] -->
|<!-- Comments -->
|<!-- Comments -->
|<!-- SiH4 [sccm] -->
|<!-- SiH4 [sccm] -->
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|February 2017 bghe<!--Tested -->
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|LF SIN<!-- Recipe -->
|LF SIN<!-- Recipe -->
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|<!-- Tune -->
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|February 2017 bghe<!--Tested -->
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|HF SiN <!-- Recipe -->
|HF SiN <!-- Recipe -->
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|February 2017 bghe<!--Tested -->
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