Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

@@ Line 8: / Line 8: @@
 {| border="1" cellspacing="2" cellpadding="2"
 |-style="background:Black; color:White"
-! Parameter
+!|Recipe
-|Recipe
 !|Dep. rate [nm/min]
 !|RI
@@ Line 27: / Line 26: @@
 |-
-|Coil Power [W]
+|MF SIN<!-- Recipe -->
-|1300
+|<!-- Dep. rate [nm/min] -->
+|<!-- RI -->
+|<!-- Unif. [%] -->
+|<!-- Stress [MPa] -->
+|<!-- Comments -->
+|<!-- SiH4 [sccm] -->
+|<!-- NH3 [sccm] -->
+|<!-- N2O [sccm] -->
+|<!-- N2 [sccm] -->
+|<!-- Pressure [mTorr] -->
+|<!-- Power [W] -->
+|<!-- Load -->
+|<!-- Tune -->
+|<!-- Time [mm:ss] -->
 |-
-|Platen Power [W]
+|LF SIN<!-- Recipe -->
-|200
+|<!-- Dep. rate [nm/min] -->
+|<!-- RI -->
+|<!-- Unif. [%] -->
+|<!-- Stress [MPa] -->
+|<!-- Comments -->
+|<!-- SiH4 [sccm] -->
+|<!-- NH3 [sccm] -->
+|<!-- N2O [sccm] -->
+|<!-- N2 [sccm] -->
+|<!-- Pressure [mTorr] -->
+|<!-- Power [W] -->
+|<!-- Load -->
+|<!-- Tune -->
+|<!-- Time [mm:ss] -->
 |-
-|Platen temperature [<sup>o</sup>C]
+|HF SiN <!-- Recipe -->
-|0
+|<!-- Dep. rate [nm/min] -->
-|-
+|<!-- RI -->
-|He flow [sccm]
+|<!-- Unif. [%] -->
-|174
+|<!-- Stress [MPa] -->
-|-
+|<!-- Comments -->
-|C<sub>4</sub>F<sub>8</sub> flow [sccm]
+|<!-- SiH4 [sccm] -->
-|5
+|<!-- NH3 [sccm] -->
-|-
+|<!-- N2O [sccm] -->
-|H<sub>2</sub> flow [sccm]
+|<!-- N2 [sccm] -->
-|4
+|<!-- Pressure [mTorr] -->
-|-
+|<!-- Power [W] -->
-|Pressure [mTorr]
+|<!-- Load -->
-|4
+|<!-- Tune -->
+|<!-- Time [mm:ss] -->
 |-
 |}