Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
| Line 117: | Line 117: | ||
|RF-power | |RF-power | ||
| | | | ||
* | *HF: 100 W 7.8s | ||
* | *LF: 100 W 2.2s | ||
|- | |- | ||
|} | |} | ||
Bghe (talk | contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,324 edits |
Bghe (talk | contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,324 edits |
||
| Line 117: | Line 117: | ||
|RF-power | |RF-power | ||
| | | | ||
* | *HF: 100 W 7.8s | ||
* | *LF: 100 W 2.2s | ||
|- | |- | ||
|} | |} | ||