Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

@@ Line 53: / Line 53: @@
 |Comments
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-|SINSTD80
+|1SiN
-|68nm/min (2014-07-07 JML)
+|
+Deposition rate in the middle of two wafers: '''49nm/min+-1nm/min''' (2015-04-24 BGHE) <br>
+In the middel: '''72.6-76.4 nm/min''' (2014-08-13 BGHE) <br>
+Variation over 3 wafers: '''71.4-78.6 nm/min''' (2014-08-13 BGHE)
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 |
+'''~2-4%''' (2015-04-24 BGHE)<br>
+'''~5%''' in the middel (4") (2014-08-13 BGHE)<br>
+'''~10%''' over 3 wafers (2014-08-13 BGHE)
 |
 |
 |
 |-
-|SINSTD96
+|SINSTD80
-|
+|68nm/min (2014-07-07 JML)
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@@ Line 69: / Line 75: @@
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 |-
-|1SiN
+|SINSTD96
 |
-Deposition rate in the middle of two wafers: '''49nm/min+-1nm/min''' (2015-04-24 BGHE) <br>
-In the middel: '''72.6-76.4 nm/min''' (2014-08-13 BGHE) <br>
-Variation over 3 wafers: '''71.4-78.6 nm/min''' (2014-08-13 BGHE)
 |
 |
-'''~2-4%''' (2015-04-24 BGHE)<br>
-'''~5%''' in the middel (4") (2014-08-13 BGHE)<br>
-'''~10%''' over 3 wafers (2014-08-13 BGHE)
 |
 |
 |
 |-
 |}