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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.


==Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride [[Image:section under construction.jpg|70px]] ==
==Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride ==
===Recipes===
===Recipes===
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{| border="1" cellspacing="0" cellpadding="7"
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