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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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==Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride PECVD1 has been decommissioned==
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|NH3 flow [sccm]
|N2 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|1nitride
|30
|20
|1000
|500
|80
|
|-
|1nit_std
|40
|20
|1960
|550
|60
|Process control recipe
|-
|}
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|RI
|Uniformity [%]
|Stress [MPa]
|BHF etch rate [Å/min]
|Comments
|-
|1nitride
|
|
|
|
|
|
|-
|1nit_std
|~32
|1.89
|~1
|
|~700
|The latest measured values can be seen in the process control sheet in LabManager
|-
|-
|}
|}
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