Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
Appearance
| Line 105: | Line 105: | ||
|- | |- | ||
|Depoition rate | |Depoition rate | ||
| | |10.4 - 13.0 nm/min | ||
|- | |- | ||
|Non-uniformity | |Non-uniformity | ||
| | |<2.0 % | ||
|- | |- | ||
|Refractive Index | |||
|1.909 - 2.028 | |||
|} | |} | ||
|- | |- | ||