Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
Appearance
No edit summary |
|||
| Line 67: | Line 67: | ||
==Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride== | ==Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride== | ||
{| border="1" cellspacing="2" cellpadding="2" colspan="3" | |||
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD3''' | |||
|- | |||
| | |||
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1389&mach=18 The QC procedure for RIE1 and RIE2]<br> | |||
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=18 The newest QC data for RIE1]<br> | |||
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=19 The newest QC data for RIE2] | |||
{| {{table}} | |||
| align="center" | | |||
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:200px" | |||
! QC Recipe: | |||
! QCNITRIDE | |||
|- | |||
| SiH<sub>4</sub> flow | |||
|30 sccm | |||
|- | |||
|NH<sub>3</sub> flow | |||
|30 sccm | |||
|- | |||
|N<sub>2</sub> flow | |||
|1470 sccm | |||
|- | |||
|Pressure | |||
|650 mTorr | |||
|- | |||
|RF-power | |||
| | |||
*LF: 20 W 2s | |||
*HF: 20 W 6s | |||
|- | |||
|} | |||
| align="center" valign="top"| | |||
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px" | |||
!QC limits | |||
!PECVD3 | |||
|- | |||
|Depoition rate | |||
|? - ? nm/min | |||
|- | |||
|Non-uniformity | |||
|? - ? % | |||
|- | |||
|} | |||
|- | |||
|} | |||
|} | |||
===Recipes=== | ===Recipes=== | ||
{| border="1" cellspacing="0" cellpadding="7" | {| border="1" cellspacing="0" cellpadding="7" | ||