Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD

At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.

Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride

Recipes

Recipe name	SiH4 flow [sccm]	NH3 flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
1nitride

Expected results

Recipe name	Deposition rate [nm/min]	RI	Uniformity [%]	Stress [MPa]
1nitride	~32	1.89	0.4

Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride

Recipes

Recipe name	SiH4 flow [sccm]	NH3 flow [sccm]	N2 flow [sccm]	Pressure [mTorr]	Power [W]	Description
MFSiNLS	30	30	1470	650	20HF 6s 20LF 2s	Low stress nitride - standard recipe
LFSiN	30	15	1470	550	60LF	Compressive stress
HFSiN	30	42	1470	900	20HF	Tensile stress

LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress

Expected results

Recipe name	Deposition rate [Å/min]	RI	Uniformity [%]	Stress [MPa]
MFSiNLS	~117	~1.99		~-30
LFSiN	~550	~1.96	~3	~-630
HFSiN	~130	~1.97	~2	~460