Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
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|650 | |650 | ||
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20LF 2s | |||
|Low stress nitride - standard recipe | |Low stress nitride - standard recipe | ||
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Revision as of 11:54, 1 November 2007
At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride
Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride
Recipes
| Recipe name | SiH4 flow [sccm] | NH3 flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| MFSiNLS | 30 | 30 | 1470 | 650 | 20HF 6s
20LF 2s |
Low stress nitride - standard recipe |
| LFSiN | 30 | 15 | 1470 | 550 | 60LF | Compressive stress |
| HFSiN | 30 | 42 | 1470 | 900 | 20HF | Tensile stress |
LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress
Expected results
| Recipe name | Deposition rate [Å/min] | RI | Uniformity [%] | Stress [MPa] |
| MFSiNLS | ~117 | ~1.99 | ~-30 | |
| LFSiN | ~550 | ~1.96 | ~3 | ~-630 |
| HFSiN | ~130 | ~1.97 | ~2 | ~460 |