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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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New page: At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be ...
 
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At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
==Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride==
==Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride==
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|NH3 flow [sccm]
|N2 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|MFSiNLS
|30
|30
|1470
|650
|20HF 6s/20LF 2s
|Low stress nitride - standard recipe
|-
|LFSiN
|30
|15
|1470
|550
|60LF
|Compressive stress
|-
|HFSiN
|30
|42
|1470
|900
|20HF
|Tensile stress
|-
|}
LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [Å/min]
|RI
|Uniformity [%]
|Stress [MPa]
|-
|MFSiNLS
|~117
|~1.99
|
|~-30
|-
|LFSiN
|~550
|~1.96
|~3
|~-630
|-
|HFSiN
|~130
|~1.97
|~2
|~460
|-
|}

Revision as of 11:48, 1 November 2007

At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.

Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride

Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride

Recipes

Recipe name SiH4 flow [sccm] NH3 flow [sccm] N2 flow [sccm] Pressure [mTorr] Power [W] Description
MFSiNLS 30 30 1470 650 20HF 6s/20LF 2s Low stress nitride - standard recipe
LFSiN 30 15 1470 550 60LF Compressive stress
HFSiN 30 42 1470 900 20HF Tensile stress

LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress

Expected results

Recipe name Deposition rate [Å/min] RI Uniformity [%] Stress [MPa]
MFSiNLS ~117 ~1.99 ~-30
LFSiN ~550 ~1.96 ~3 ~-630
HFSiN ~130 ~1.97 ~2 ~460
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