Specific Process Knowledge/Thin film deposition/Deposition of Titanium/Ti deposition in Sputter System (Lesker): Difference between revisions
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image:eves_Ti_old_lesker_250W_2021.png| X-ray reflectivity. Measurement and Fit. | image:eves_Ti_old_lesker_250W_2021.png| X-ray reflectivity. Measurement and Fit. | ||
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Latest revision as of 17:20, 9 January 2025
Ti Sputtering
This page presents the results of Ti deposition using DC sputtering in Sputter-System Lesker, now commonly known as "Old Lesker". The deposition target is Ti. Source #3 (DC) was used.
The fabrication and characterization described below were conducted in 2021 by Evgeniy Shkondin, DTU Nanolab. The prepared samples were investigated by the X-ray Reflectivity method. The focus of the study was the deposition conditions.
The process recipe in a Sputter-System (Lesker) is following:
- Deposition type: DC
- Power: Variable.
- Pressure: 3 mTorr
- Gas: Ar
- Deposition time: Variable.
- Temperature: 20°C (no heating)
- Deposition rate as a function of power.
-
Deposition rate as a function of power is represented only by two measurements (20W and 250W). Nevertheless, since the fit value goes directly through the origin of the plot it looks very trustworthy.
Power 20W
Such a low power can be used for doping purposes during transparent conducting oxide thin film production (such as doped ZnO or similar). For other applications higher powers are preferable.
- Measured DC bias: 253V
- Deposition time: 1800s
- Deposition Rate: 0.007 nm/s
| Layer parameter list | |||||
|---|---|---|---|---|---|
| Layer name | Thickness (nm) | Density (g/cm3) | Rougness (nm) | Delta | Beta |
| Moisture | 1.29 | 1.00 | 1.75 | 3.2782e-6 | 7.6125e-8 |
| Ti (sputtered) | 12.63 |
4.41 | 0.94 | 1.2532e-5 | 1.0221e-6 |
| SiO2 (native oxide) | 2.00 | 2.14 | 0.32 | 6.9461e-6 | 9.0523e-8 |
| Si (wafer) | 2.328 | 0.53 | 7.5796e-6 | 1.7601e-7 | |
- XRR analysis of Ti thin film.
-
X-ray reflectivity. Measurement and Fit.
Power 250W
High powers can be used for metalic contacts, adhesion layers, etc.
- Measured DC bias: 330V
- Deposition time: 60s
- Deposition Rate: 0.094 nm/s
| Layer parameter list | |||||
|---|---|---|---|---|---|
| Layer name | Thickness (nm) | Density (g/cm3) | Rougness (nm) | Delta | Beta |
| Moisture | 0.32 | 1.46 | 0.04 | 4.4860e-6 | 2.1962e-7 |
| Ti (sputtered) | 5.66 |
4.95 | 1.85 | 1.4735e-5 | 1.2017e-6 |
| SiO2 (native oxide) | 1.48 | 1.74 | 0.37 | 5.6276e-6 | 7.3340e-8 |
| Si (wafer) | 2.328 | 0.29 | 7.5796e-6 | 1.7601e-7 | |
- XRR analysis of Ti thin film.
-
X-ray reflectivity. Measurement and Fit.
