Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
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|The latest measured values can be seen in the process control sheet in LabManager | |||
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Revision as of 16:29, 15 November 2010
At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the PECVD page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride
Recipes
| Recipe name | SiH4 flow [sccm] | NH3 flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| 1nitride | 30 | 20 | 1000 | 500 | 80 | |
| 1nit_std | 40 | 20 | 1960 | 550 | 60 | Process control recipe |
Expected results
| Recipe name | Deposition rate [nm/min] | RI | Uniformity [%] | Stress [MPa] | Comments |
| 1nitride | |||||
| 1nit_std | ~32 | 1.89 | ~1 | The latest measured values can be seen in the process control sheet in LabManager |
Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride
Recipes
| Recipe name | SiH4 flow [sccm] | NH3 flow [sccm] | N2 flow [sccm] | Pressure [mTorr] | Power [W] | Description |
| MFSiNLS | 30 | 30 | 1470 | 650 | 20HF 6s
20LF 2s |
Low stress nitride - standard recipe |
| LFSiN | 30 | 15 | 1470 | 550 | 60LF | Compressive stress |
| HFSiN | 30 | 42 | 1470 | 900 | 20HF | Tensile stress |
LF=Low Frequency HF=High Frequency MF=Mixed Frequency SiN=Silicon Nitride LS=Low Stress
Expected results
| Recipe name | Deposition rate [Å/min] | RI | Uniformity [%] [Std./mean] |
Stress [MPa] | KOH etch rate [Å/min] |
| MFSiNLS | ~117 | ~1.99 | ~4 | ~-30 | ~2.5 |
| LFSiN | ~550 | ~1.96 | ~3 | ~-630 | |
| HFSiN | ~130 | ~1.97 | ~2 | ~460 |