Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3: Difference between revisions
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This page presents the results of Scandium Nitride deposition using <b>RF</b> Reactive Sputtering in Sputter-System Metal-Nitride (PC3) commonly known as "Cluster Lesker". The deposition target is 4" <b>Sc</b> (0. | This page presents the results of Scandium Nitride deposition using <b>RF</b> Reactive Sputtering in Sputter-System Metal-Nitride (PC3) commonly known as "Cluster Lesker". The deposition target is 4" <b>Sc</b> (0.250" Indium bonded with indium to 3mm Cu plate). Source #1 was used. Materials (ScN) from this source can either be deposited with RF or p-DC sputtering although only RF mode has been tested so far. | ||
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[[Specific Process Knowledge/Characterization/XRD/XRD_SmartLab|X-ray Reflectivity]] analysis of ScN samples have been performed to investigate the thicknesses, roughness, and density profiles. | [[Specific Process Knowledge/Characterization/XRD/XRD_SmartLab|X-ray Reflectivity]] analysis of ScN samples have been performed to investigate the thicknesses, roughness, and density profiles. | ||
The scans has been obtained using Rigaku XRD SmartLab equipment. The voltage and current settings for the Cu X-ray tube were standard 40kV and 30mA. The incident optics contained a IPS (incident parallel slit) adaptor with 5 ° Soller slit. Other slits: IS=0.05mm RS1=0.05mm and RS2=0.075mm. Step size: 0.01 and measurement time - 5s for each point. Fitting procesure was performed using commercial GlobalFit software assuming the model based on Si substrate followed by the | The scans has been obtained using Rigaku XRD SmartLab equipment. The voltage and current settings for the Cu X-ray tube were standard 40kV and 30mA. The incident optics contained a IPS (incident parallel slit) adaptor with 5 ° Soller slit. Other slits: IS=0.05mm RS1=0.05mm and RS2=0.075mm. Step size: 0.01 and measurement time - 5s for each point. Fitting procesure was performed using commercial GlobalFit software assuming the model based on Si substrate followed by Sc-Si transition layer for better fit, followed by the main ScN film with thin oxides and moisture surfaces. The results are summarized in a tables below. | ||