Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using Lesker sputter tool: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser. | '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_Lesker_sputter_tool click here]''' | ||
=Sputter deposition of SiO<sub>2</sub> using Sputter-System (Lesker)= | =Sputter deposition of SiO<sub>2</sub> using Sputter-System (Lesker)= | ||
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==SiO<sub>2</sub> | ==SiO<sub>2</sub> Reactive RF Sputtering from Si target== | ||
This page presents the results of reactive SiO<sub>2</sub> deposition using <b>RF sputtering</b> with oxygen in Sputter-System Lesker, now commonly known as "Old Lesker". The deposition target is <b>Si</b>. Source #5 (RF) was used. R-RF SiO<sub>2</sub> is commonly used for the dielectric layers, especially if lift-off is needed. | This page presents the results of reactive SiO<sub>2</sub> deposition using <b>R-RF sputtering</b> with oxygen in Sputter-System Lesker, now commonly known as "Old Lesker". The deposition target is <b>Si</b>. Source #5 (RF) was used. R-RF SiO<sub>2</sub> is commonly used for the dielectric layers, especially if lift-off is needed. | ||
The fabrication and characterization described below were conducted in <b>18 of March 2022 by Evgeniy Shkondin, DTU Nanolab</b>. The prepared samples were investigated by the Spectroscopic Ellipsometry. The Sellmeier optical model is used. The focus of the study was the deposition conditions for possible backup in case of Cluster Lesker failure. | The fabrication and characterization described below were conducted in <b>18 of March 2022 by Evgeniy Shkondin, DTU Nanolab</b>. The prepared samples were investigated by the Spectroscopic Ellipsometry. The Sellmeier optical model is used. The focus of the study was the deposition conditions for possible backup in case of Cluster Lesker failure. | ||
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<gallery caption="Uniformity measurements and optical function." widths=" | <gallery caption="Uniformity measurements and optical function." widths="400px" heights="350px" perrow="2"> | ||
image:eves_SiO2_R-RF_old_Lesker_20220110.png| Uniformity across 100 wafer. | image:eves_SiO2_R-RF_old_Lesker_20220110.png| Uniformity across 100 wafer. | ||
image:eves_refractive_index_SiO2_old_lesker_R-RF_20220718.png| Measured refractive index. | image:eves_refractive_index_SiO2_old_lesker_R-RF_20220718.png| Measured refractive index. | ||
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==Non reactive SiO<sub>2</sub> deposition from SiO<sub>2</sub> target== | <br> | ||
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==Non-reactive SiO<sub>2</sub> deposition from SiO<sub>2</sub> target== | |||
SiO<sub>2</sub> can also be sputtered directly from SiO<sub>2</sub> target with RF bias assistance in the Sputter-System (Lesker). | SiO<sub>2</sub> can also be sputtered directly from SiO<sub>2</sub> target with RF bias assistance in the Sputter-System (Lesker). | ||
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The "SiO<sub>2</sub> target (RF sputter)" study was done on clean Si substrates. The sputter power was 157W and the pressure 3.5 mTorr using RF sputtering of a SiO<sub>2</sub> target. The film thicknesses were around 42 nm. | The "SiO<sub>2</sub> target (RF sputter)" study was done on clean Si substrates. The sputter power was 157W and the pressure 3.5 mTorr using RF sputtering of a SiO<sub>2</sub> target. The film thicknesses were around 42 nm. | ||
<b>From SiO<sub>2</sub> target (RF sputter)</b> | |||
{| {{table}} border="1" cellspacing="0" cellpadding="8" | {| {{table}} border="1" cellspacing="0" cellpadding="8" | ||
| align="center" style="background:#f0f0f0;"|'''Wafer nr''' | | align="center" style="background:#f0f0f0;"|'''Wafer nr''' | ||