Specific Process Knowledge/Thin film deposition/Deposition of TiW/Sputtering of TiW in Wordentec/Grain size and uniformity of TiW layers: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_TiW/Sputtering_of_TiW_in_Wordentec/Grain_size_and_uniformity_of_TiW_layers click here]''' | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_TiW/Sputtering_of_TiW_in_Wordentec/Grain_size_and_uniformity_of_TiW_layers click here]''' | ||
==Grains and uniformity of a sputtered TiW film== | ==Grains and uniformity of a sputtered TiW film== | ||
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'''Power 150 W, pressure 1*10<sup>-3</sup> mbar''' | '''Power: 150 W, pressure: 1*10<sup>-3</sup> mbar''' | ||
With use of the settings 150W and 1*10<sup>-3</sup> mbar, a surface with low roughness is deposited. | With use of the settings 150W and 1*10<sup>-3</sup> mbar, a surface with low roughness is deposited. | ||