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Specific Process Knowledge/Thermal Process/Storage and cleaning of wafer to the A, B, C and E stack furnaces: Difference between revisions

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====C2 furnace:====
====C2 furnace:====
*Dedicated for oxidation of III-V materials. More information can be found [[Specific_Process_Knowledge/Thermal_Process/C2_Furnace_III-V_oxidation)|here]].
*Dedicated for oxidation of III-V materials. More information can be found [[Specific_Process_Knowledge/Thermal_Process/C2_Furnace_III-V_oxidation | here]].


====C3 furnace:====
====C3 furnace:====
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====C4 furnace:====
====C4 furnace:====
*For annealing of wafers and wafer pieces with Al, Al2O3 and TiO2. The samples cannot be RCA cleaned.  
*For annealing of wafers and wafer pieces with Al, Al2O3 and TiO2. The samples cannot be RCA cleaned.  
====E1 furnace:====
*New silicon wafers can go directly into the furnace.
*Other processed wafers and new quartz wafers have to be RCA cleaned. The wafers can be cleaned the day before they are going into the furnace.