Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

← Older edit
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,324 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,324 edits
 
(61 intermediate revisions by 5 users not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride/Deposition_of_Silicon_Nitride_using_PECVD click here]'''
{{cc-nanolab}}


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride/Deposition_of_Silicon_Nitride_using_PECVD click here]''' <br>


At the moment DANCHIP has 3 PECVDs that can deposite silicon nitride and silicon oxynitride. PECVD1 and PECVD3 are for silicon based processing. PECVD2 is for III-V processing and will be describes under III-V processing. Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DANCHIP. All though PECVD1 and PECVD3 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.


== Deposition of SiN with PECVD4 [[Image:section under construction.jpg|70px]] ==
=Deposition of Silicon Nitride using PECVD=


{| border="1" cellspacing="2" cellpadding="2"  
At the moment DTU Nanolab has 2 PECVDs that can deposit silicon nitride and silicon oxynitride. PECVD4 is for clean silicon based and III-V based samples. PECVD3 is for silicon based samples but here up 5% (4 cm2) wafer coverage of other materials as metals are allowed (under some conditions even more). Look at the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] page to learn more about the PECVDs at DTU Nanolab. All though PECVD3 and PECVD4 are very much alike you cannot count on the a recipe on one system will give exactly the same results on the other system.
|-style="background:Black; color:White"
 
! Parameter
== Deposition of SiN with PECVD4 ==
|  
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for PECVD4 '''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5093&mach=395 The QC procedure for PECVD4 - requires login]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=395 The newest QC data for PECVD4 - requires login]<br>
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:200px"
 
! QC Recipe:
! QCNITRIDE=HFSIN
|-
| SiH<sub>4</sub> flow
|40 sccm
|-
|-
|Coil Power [W]
|NH<sub>3</sub> flow
|1300
|55 sccm
|-
|-
|Platen Power [W]
|N<sub>2</sub> flow
|200
|1960 sccm
|-
|Pressure
|900 mTorr
|-
|-
|Platen temperature [<sup>o</sup>C]
|RF-power
|0
|
HF: 20 W 
|-
|-
|He flow [sccm]
|}
|174
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!PECVD4
|-
|-
|C<sub>4</sub>F<sub>8</sub> flow [sccm]
|Deposition rate
|5
|11.0-13.2 nm/min
|-
|-
|H<sub>2</sub> flow [sccm]
|Non-uniformity
|4
|<3.0 %
|-
|-
|Pressure [mTorr]
|Refractive Index
|4
|1.988 - 2.018
|}
|-
|-
|}
|}
|}


<nowiki>*</nowiki> Due to recent oscillations on the QC nitride recipe (HF), new tests were performed. Learn more about it under [[Deposition of SiN with PECVD4/NEW TESTS QC|NEW TESTS QC]] . (Still under development.)




 
{| border="1" cellspacing="2" cellpadding="2"  
{| border="2" cellspacing="2" cellpadding="3"
|-style="background:Black; color:White"
|-style="background:DarkGray; color:White"
!|Recipe
!Material to be etched
!|Dep. rate [nm/min]
!Etch rate using SiO2_res
!|RI
|-
!|Unif. [%]
|Thermal oxide
!|Stress [MPa]
|
!|Comments
*'''~230nm/min (5% etch load)''' -  etch load dependency [[/AOE SiO2 etch load dependency|'''see here''']]
!|SiH4 [sccm]
*~200 nm/min ''fall 2016 by Martin Lind Ommen @nanotech''
!|NH3 [sccm]
!|N2O [sccm]
!|N2 [sccm]
!|Pressure [mTorr]
!|Power [W]
!|Load
!|Tune
!|Time [mm:ss]
!|Tested
|-
|-
|TEOS oxide (5% load)
|MF SIN<!-- Recipe -->
|'''233nm/min &plusmn;0.7%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 ''by LN/BGE@danchip''
|12.9-13.0 nm/min <br> 11.7 nm/min (''kabi 2019-03-01'')<!-- Dep. rate [nm/min] -->
|2.038-2.044<!-- RI -->
|&plusmn; 1.7%<!-- Unif. [%] -->
|157 MPa <!-- Stress [MPa] -->
|[[/MF_SiN results|more results]]<!-- Comments -->
|40<!-- SiH4 [sccm] -->
|40<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|1920<!-- N2 [sccm] -->
|900 mTorr<!-- Pressure [mTorr] -->
|20HF6"/20LF2"<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|10:00/60:00(stress)<!-- Time [mm:ss] -->
|February 2017 Berit Herstrøm @DTU Nanolab (bghe)<!--Tested -->
|-
|-
|PECVD1 (standard) oxide (5% load)
|'''242nm/min &plusmn;0.6%''' - "&plusmn;" represents the non-uniformity over a 100mm wafer - etched in Marts 2013 by ''LN/BGE@danchip''
|-
|Al2O3 from the ALD
|
*34.2 nm/min (1:6 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
*50nm can be etched in 10min - [[/Etch of Al2O3|'''See results here''']] etched in November 2014 by ''FRSTO@danchip''
|-
|-
|Silicon rich nitride from furnace B2
|MF SIN2<!-- Recipe -->
|136nm was etched in 1min (whole wafer) - etched in October 2015 by ''bghe@danchip''
|44.3 nm/min <!-- Dep. rate [nm/min] -->
|2.01-2.02 <!-- RI -->
|&plusmn; 2.7%<!-- Unif. [%] -->
|? MPa <!-- Stress [MPa] -->
|<!-- Comments -->
|30<!-- SiH4 [sccm] -->
|30<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|1470<!-- N2 [sccm] -->
|850 mTorr<!-- Pressure [mTorr] -->
|100HF8.2"/100LF2.2"<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|10:00<!-- Time [mm:ss] -->
|February 2020 bghe<!--Tested -->
|-
|-
|Cr
|LF SIN<!-- Recipe -->
|6 nm/min (1:33 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
|40-43 nm/min<!-- Dep. rate [nm/min] -->
|1.983-1.984<!-- RI -->
|&plusmn; 3.9-4.4%<!-- Unif. [%] -->
|Compressive: 565.4 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|40<!-- SiH4 [sccm] -->
|20<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|1960<!-- N2 [sccm] -->
|550 mTorr<!-- Pressure [mTorr] -->
|60LF<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|2:00/23:00(stress)<!-- Time [mm:ss] -->
|February 2017 bghe<!--Tested -->
|-
|-
|Al
|HF SiN <!-- Recipe -->
|25nm/min (1:8 to SiO2) ''fall 2016 by Martin Lind Ommen @nanotech''
|12.2-12.4 nm/min<!-- Dep. rate [nm/min] -->
|2.017-2.021<!-- RI -->
|&plusmn; 1.2-1.6%<!-- Unif. [%] -->
|Tensile: 431.6 MPa<!-- Stress [MPa] -->
|<!-- Comments -->
|40<!-- SiH4 [sccm] -->
|55<!-- NH3 [sccm] -->
|<!-- N2O [sccm] -->
|1960<!-- N2 [sccm] -->
|900 mTorr<!-- Pressure [mTorr] -->
|20 W<!-- Power [W] -->
|<!-- Load -->
|<!-- Tune -->
|10:00/56:00(stress)<!-- Time [mm:ss] -->
|February 2017 bghe<!--Tested -->
|-
|-
|}
|}


<br clear="all" />
<br clear="all" />
==Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride ==
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|NH3 flow [sccm]
|N2 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|SINSTD80
|30
|20
|1000
|500
|80
|
|-
|SINSTD96
|30
|20
|1000
|500
|96
|
|-
|1SiN
|40
|20
|1000
|700
|150
|
|-
|}
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|RI
|Uniformity [%]
|Stress [MPa]
|BHF etch rate [Å/min]
|Comments
|-
|1SiN
|
Deposition rate in the middle of two wafers: '''49nm/min+-1nm/min''' (2015-04-24 BGHE) <br>
In the middel: '''72.6-76.4 nm/min''' (2014-08-13 BGHE) ''Old shower head''<br>
Variation over 3 wafers: '''71.4-78.6 nm/min''' (2014-08-13 BGHE) ''Old shower head''
|
|
'''~2-4%''' (2015-04-24 BGHE)<br>
'''~5%''' in the middel (4") (2014-08-13 BGHE) ''Old shower head''<br>
'''~10%''' over 3 wafers (2014-08-13 BGHE) ''Old shower head''
|
|
|
|-
|SINSTD80
|68nm/min (2014-07-07 JML)- unstable deposition rate
|
|
|
|
|
|-
|SINSTD96 - unstable deposition rate
|
|
|
|
|
|
|-
|}


<br clear="all" />
<br clear="all" />


==Recipes on PECVD3 for deposition of silicon nitride and silicon oxynitride==
==Recipes on PECVD3 for deposition of silicon nitride==


{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
Line 163: Line 163:
|-
|-
|
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3]<br>
*[http://labmanager.dtu.dk/d4Show.php?id=1402&mach=106 The QC procedure for PECVD3 - requires login]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3]<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=106 The newest QC data for PECVD3 - requires login]<br>
{| {{table}}
{| {{table}}
| align="center" |  
| align="center" |  
Line 195: Line 195:
!PECVD3
!PECVD3
|-
|-
|Depoition rate
|Deposition rate
|~40 nm/min
|~40 nm/min
|-
|-
Line 207: Line 207:
|}
|}
|}
|}


===Recipes===
===Recipes===
Line 277: Line 276:
|~2.1 (''bghe Feb 2016'')
|~2.1 (''bghe Feb 2016'')
|~?
|~?
|[[/PECVD3: Low stress nitride testing|see DOE]]  
|[[/PECVD3: Low stress nitride testing|see more results]]  
|-
|-
|MFSiNLS
|MFSiNLS
Line 308: Line 307:
|}
|}


==Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride. <span style="color:Red">Expired!</span>:PECVD1 has been decommissioned==
==Recipes on PECVD2 for Deposition of Silicon Nitride==
'''<span style="color:Red">Expired Recipes! The PECVD2 has been decomissioned and is no longer available.</span>'''
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|NH3 flow [sccm]
|N2 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|SINSTD80
|30
|20
|1000
|500
|80
|
|-
|SINSTD96
|30
|20
|1000
|500
|96
|
|-
|1SiN
|40
|20
|1000
|700
|150
|
|-
|}
 
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|RI
|Uniformity [%]
|Stress [MPa]
|BHF etch rate [Å/min]
|Comments
|-
|1SiN
|
Deposition rate in the middle of two wafers: '''49nm/min+-1nm/min''' (2015-04-24 BGHE) <br>
In the middel: '''72.6-76.4 nm/min''' (2014-08-13 BGHE) ''Old shower head''<br>
Variation over 3 wafers: '''71.4-78.6 nm/min''' (2014-08-13 BGHE) ''Old shower head''
|
|
'''~2-4%''' (2015-04-24 BGHE)<br>
'''~5%''' in the middel (4") (2014-08-13 BGHE) ''Old shower head''<br>
'''~10%''' over 3 wafers (2014-08-13 BGHE) ''Old shower head''
|
|
|
|-
|SINSTD80
|68nm/min (2014-07-07 JML)- unstable deposition rate
|
|
|
|
|
|-
|SINSTD96 - unstable deposition rate
|
|
|
|
|
|
|-
 
|}
 
==Recipes on PECVD1 for Deposition of Silicon Nitride==
'''<span style="color:Red">Expired Recipes! The PECVD1 has been decomissioned and is no longer available.</span>'''
===Recipes===
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
{| border="1" cellspacing="0" cellpadding="7"
Line 366: Line 449:
|-
|-
|}
|}
=Oxynitrides=
The recipe for making oxynitrides will depend on what kind of oxynitride you need. If you need a little higher refractive index than SiO2 then start with an SiO2 recipe and then add NH3 until the right refractive index is obtained. If you need very high refractive index a little lower than for silicon nitride then it is probably better to start with a silicon nitride recipe and add a some N2O until you get the right refractive index.
We had a Ph.d student long time ago Klaus Bo Mogensen that did the first. You can find his ph.d. thesis here: [https://findit.dtu.dk/en/catalog?author=Mogensen&q=title%3A%28Integration+of+Planar+Waveguides+for+Optical+Detection+in+Microfabricated+Analytical+Devices%29 Integration of Planar Waveguides for Optical Detection in Microfabricated Analytical Devices]
Berit H. has the thesis in her office.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride/Deposition_of_Silicon_Nitride_using_PECVD"