Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si: Difference between revisions

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+{{cc-nanolab}}
 '''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon/Boron_doped_poly-Si_and_a-Si click here]'''
 ==Boron-doped amorphous silicon by using 4" LPCVD polysilicon furnace (B4) ==
-''Result from Thomas Pedersen, @Nanotech, Sep 2015''
+''Result from Thomas Pedersen, DTU Nanotech (now DTU Nanolab), September 2015''
 ====Process parameters====
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 [[image:Boron concentration2.jpg|627x424px|left|thumb|Boron concentration measured by SIMS. Result from Thomas Pedersen, Nanotech, Sep 2015.]]
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+== Boron-doped amorphous silicon by using 4" LPCVD polysilicon furnace (B4) ==
+''Result from Trine Holm Christensen, @Space, Feb. 2015''
+====Process parameters====
+The test was made on a n-type silicon wafer (100) with a 110 nm grown thermal oxide)
+'''Pressure:'''  250 mtorr
+'''Temperature:''' 580 °C
+'''Silane (SiH<sub>4</sub>) flow:''' 80 sccm
+'''Diborane (B<sub>2</sub>H<sub>6</sub>) flow:''' 7 sccm
+'''Time:''' 75 min
+'''Anneal:''' @950°C for 60 min in N<sub>2</sub>
+'''Test wafer position:''' Center of the boat
+A better uniformity of the resistivity across the wafer was achieved by subsequently annealing in N<sub>2</sub>, the annealing was done in Anneal Oxide Furnace (C1). The measured film thickness was 370 nm and the sheet resistance was measured to 200 &Omega;/sq +/- 15 &Omega;/sq.