Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions
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*Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | *Dry SiO<sub>2</sub>: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | ||
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/A2 furnace break-down voltage measurement results|Break-down voltage measurement results]] | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||