Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions
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[[Image:borpredep.jpg|thumb|300x300px|Gate Oxide furnace (A2). Positioned in cleanroom B-1.''Photo: DTU Nanolab internal'']] | [[Image:borpredep.jpg|thumb|300x300px|Gate Oxide furnace (A2). Positioned in cleanroom B-1.''Photo: DTU Nanolab internal'']] | ||
The Gate Oxide furnace (A2) is a Tempress horizontal furnace for dry oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is very thin og clean thermal oxide layer located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor). | The Gate Oxide furnace (A2) is a Tempress horizontal furnace for dry oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is a very thin og clean thermal oxide layer located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor). | ||
Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature. | Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature. | ||