Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions
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!style="background:silver; color:black;" align="center"|Purpose | !style="background:silver; color:black;" align="center"|Purpose | ||
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Oxidation of silicon wafers (e.g. gate oxide layers) | |||
|style="background:WhiteSmoke; color:black"|Oxidation: | |style="background:WhiteSmoke; color:black"|Oxidation: | ||
*Dry oxidation using O<sub>2</sub> | *Dry oxidation using O<sub>2</sub> | ||
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|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
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*800-1150 <sup>o</sup>C | *800 <sup>o</sup>C - 1150 <sup>o</sup>C | ||
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|style="background:LightGrey; color:black"|Process pressure | |style="background:LightGrey; color:black"|Process pressure | ||
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*1 atm (no vacuum) | *1 atm (no vacuum) | ||
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|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Gases on the system | ||
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*N<sub>2</sub> | *N<sub>2</sub> | ||