Specific Process Knowledge/Characterization/X-Ray Diffractometer: Difference between revisions
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The Philips DCD IIH x-ray diffractometer used to characterize the layers on epitaxial semiconductor structures - usually III-V compound semiconductors. | The Philips DCD IIH x-ray diffractometer used to characterize the layers on epitaxial semiconductor structures - usually III-V compound semiconductors. | ||
X-ray diffraction is a non-destructive technique to measure the lattice mismatch of epitaxial grown layers. The resulting measurements are also know as rocking-curves. In this way it is possible to get the relative content of e.g. In in Ga<sub>x</sub>In<sub>1-x</sub>As grown on InP. Ga<sub>0.47</sub>In<sub>0.53</sub>As is lattice-matched to InP. Compunds containing three different materials are also called ternaries. | X-ray diffraction is a non-destructive technique to measure the lattice mismatch of epitaxial grown layers. The resulting measurements are also know as rocking-curves. In this way it is possible to get the relative content of e.g. In in Ga<sub>x</sub>In<sub>1-x</sub>As grown on InP. Ga<sub>0.47</sub>In<sub>0.53</sub>As is lattice-matched to InP. Compunds containing three different materials are also called ternaries. | ||